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Strain dependence of the valence-band offset in InAs/GaAs heterojunctions determined by ultraviolet photoelectron spectroscopy

机译：紫外光电子能谱法测定InAs / GaAs异质结中价带偏移的应变依赖性

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Lüth, H.; Förster, A.; Kohleick, R.; Ohler, C.;
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年度 1994
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Strain dependence of the valence-band offset in InAs/GaAs heterojunctions determined by ultraviolet photoelectron spectroscopy

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